Philips bfq68 cnv 2 free download

File name bfq68_cnv_2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 DESCRIPTION PINNING NPN transistor mounted in a four-lead PIN DESCRIPTION dual-emitter SOT122A envelope with 1 collector a ceramic cap. All leads are isolated fpage 4 from the stud. Diffused 2 emitter emitter-ballasting resistors and the 3 base 1 3 application of gold sandwich 4 emitter metallization ensure an optimum temperature profile and excellent reliability properties. It features very 2 high output voltage capabilities. Top view MBK187 It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power Fig.1 SOT122A. band IV and V equipment. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCEO collector-emitter voltage open base - 18 V IC collector current - 300 mA Ptot total power dissipation up to Tc = 110